| 摘要 |
PROBLEM TO BE SOLVED: To uniformly stabilize an etching rate by more uniformly stabilizing the uniformity of a laminar flow of etching solution. SOLUTION: A substrate P is transferred on a transfer surface 6, and a plurality of nozzle elements 8 having a discharge port 9 at a plurality of points arranged in a two-dimensional manner facing the transfer surface 6. A plurality of discharge flows of the etching solution discharged from adjacent three of the plurality of points cover one point of the substrate P. In particular, an inequality of (a)<=tan(θ).Z is ideally satisfied among three points, where (a) is the distance between the adjacent points, Z is the distance between the discharge port and the transfer surface, and 2θis the opening angle of a conical flow ejected from the nozzle. A local composite flow of the etching solution of three-point duplication is generated in a laminar flow 21 over the entire area to effectively prevent generation of local turbulent flow. As a result, a static laminar flow 21 over the entire area is generated on the substrate plate. The substrate is treated under the static laminar flow, the local treatment of the substrate is statically performed, and the substrate is eventually subjected to the uniform and homogeneous treatment without any fluctuation over the entire area.
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