| 摘要 |
PROBLEM TO BE SOLVED: To enable the lengths C1 and C2 of two channels formed on the surface of a semiconductor substrate 1 just under gate electrodes 6a and 6b to be made equal to each other, in a semiconductor device manufacturing method where a first gate electrode 6a and a second electrode 6b are formed on the surface of a semiconductor substrate between a first region 4 and second regions 7 and 7 through the intermediary of an insulating film 2 so as to be short- circuited to the first semiconductor region 4. SOLUTION: The edges (edge on side of source 7) of the N-type drain region 4 and the edges of a pair of N-type source regions 7 and 7 formed on both the sides of the drain region 4 are positioned through a self-aligned method in which the gate electrodes 6a and 6b are used as mask, by which the drain region 4 and the source regions 7 are formed.
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