发明名称 SEMICONDUCTOR DEVICE WITH IDENTIFICATION NUMBER, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
摘要 PURPOSE: To economically provide an ultra-small semiconductor device bearing an identification number by efficiently using an electron beam drawing method. CONSTITUTION: A memory for identifying a 128 bit identification number which uses a transistor comprises a contact hole selectively formed by an electron beam drawing method. The major side length of a semiconductor chip is 0.5 nm or shorter in top view. The contact hole is generated at the same time when a contact hole of a surrounding circuit is generated. The major side length, in top view, of the semiconductor chip is smaller than the thickness of a wafer before manufacturing while allowed to be larger than the thickness after the wafer is made thinner. The same data as a bar code is stored in a memory separately. A data provided by encrypting the identification number is used to inspect a semiconductor chip.
申请公布号 KR20020046911(A) 申请公布日期 2002.06.21
申请号 KR20010052807 申请日期 2001.08.30
申请人 HITACHI, LTD. 发明人 USAMI MITSUO
分类号 G03F7/20;G06K19/07;G06K19/077;G11C17/00;G11C17/08;G11C17/12;G11C17/18;G11C29/56;H01L21/027;H01L21/822;H01L21/8246;H01L23/00;H01L23/544;H01L27/04;H01L27/10;H01L27/112;(IPC1-7):G06K19/07 主分类号 G03F7/20
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