| 摘要 |
PURPOSE: To provide a semiconductor device which has a desired stable breakdown voltage by preventing generation of partial breakdown on a side surface of a semiconductor device from which side surface a p-n junction is exposed. CONSTITUTION: This semiconductor device is provided with a p-type third semiconductor region 12, formed on one main surface side of an n-type silicon substrate 11, an n-type second semiconductor region 14 which is formed selectively at the center of the other main surface side, an n-type first semiconductor region 13 which is formed between the region 12 and the region 14, and an n-type fourth semiconductor region 15 which is formed at peripheries of the region 13 and the region 14. The density of impurities in the region 13 is set to be higher than that of the region 15 surrounding the region 13. As a result, generation of partial breakdown on a side surface of a chip, from which side surface the pn junction is exposed is prevented, and a semiconductor diode 10 having the desired stable breakdown voltage can be realized. |
