METHOD FOR PROGRAMMING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for programming a nonvolatile semiconductor memory device is provided to increase a threshold voltage of a parasitic MOS transistor formed between adjacent cells without increasing a word line voltage. CONSTITUTION: According to data bits latched in first and second page buffers(130_0,130_1), a bit line level control signal having a first voltage is generated so that each of first and second bit lines(BL0,BL1) has one of a program voltage and a program prohibition voltage. The first and second bit lines(BL0,BL1) are electrically insulated from the first and second page buffers(130_0,130_1). A bit line level control signal having a second voltage is generated and a current is supplied to the first and second bit lines(BL0,BL1) so that a voltage of a bit line is set higher than the program voltage. A current supply to the first and second bit lines(BL0,BL1) is intercepted and a high voltage is applied to a selecting word line among word lines.