摘要 |
PURPOSE: A fabrication method of a cup-cylindrical capacitor is provided to simplify manufacturing processes and to improve the uniformity of capacitor pattern by simultaneously removing and cleaning an oxide layer. CONSTITUTION: A polysilicon cylinder(23) includes a first oxide layer(21) formed at the inner portion and a second oxide layer(22) formed at the outer portion of the polysilicon cylinder. The polysilicon cylinder(23) is then isolated. A wet-etching for removing the first oxide layer(21) and a cleaning for removing a native oxide of the polysilicon cylinder(23) are simultaneously performed. An USG(Undoped Silicon Glass) or an SOG(Silicon On Glass) is used as the first oxide layer(21).
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