发明名称 METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A fabrication method of a cup-cylindrical capacitor is provided to simplify manufacturing processes and to improve the uniformity of capacitor pattern by simultaneously removing and cleaning an oxide layer. CONSTITUTION: A polysilicon cylinder(23) includes a first oxide layer(21) formed at the inner portion and a second oxide layer(22) formed at the outer portion of the polysilicon cylinder. The polysilicon cylinder(23) is then isolated. A wet-etching for removing the first oxide layer(21) and a cleaning for removing a native oxide of the polysilicon cylinder(23) are simultaneously performed. An USG(Undoped Silicon Glass) or an SOG(Silicon On Glass) is used as the first oxide layer(21).
申请公布号 KR20020046307(A) 申请公布日期 2002.06.21
申请号 KR20000075627 申请日期 2000.12.12
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, SANG HYEOK
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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