| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the whole semiconductor integrated circuit is miniaturized by arranging a capacitor effectively and the degree of freedom in circuit design is improved, and its manufacturing method. SOLUTION: This semiconductor device is provided with a first wiring layer positioned on a semiconductor substrate 10, a second wiring layer which is positioned on the same side as the first wiring layer and isolated from the first wiring layer, and a capacitor 1 arranged between a first wiring 2 belonging to the first wiring layer and a second wiring 3 belonging to the second wiring layer. The capacitor 1 is arranged in a crossing part of the first wiring and the second wiring, viewed from a plane, and has a dielectrics film 7 whose one surface is in contact with the first wiring 2 and the other surface is in contact with the second wiring 3.
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