| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching system that can realize a uniform etching characteristic having no difference between the central part and edge part of a wafer. SOLUTION: A chamber 10 has a central exhaust port 11 above a wafer 4 and the gas in the chamber 10 is exhausted by means of a turbo pump 12. The flow of an etching gas generates a flow which passes through the central part of the wafer 4 in addition to the conventional flow which passes through the edge section of the wafer 4. In this etching system, the gas in the chamber 10 is exhausted through the central exhaust port 11 by means of the turbo pump 12 mounted on the upper central part of the system. The uniform etching characteristic is realized by balancing the flows of the etching gas by optimizing the diameter of the exhaust port 11 against the aspect ratio of the chamber 10 or rationalizing the exhaust conductance of each flow.
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