| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical-type epitaxial-growth apparatus, whereby the films of epitaxial-growth layers can be formed on wafers, while maintaining proper distribution for the thicknesses of the films between the wafers. SOLUTION: The vertical-type epitaxial-growth apparatus has a susceptor, rotated together with its vertical-direction rotating axis, wherein wafers W are held horizontally, a work coil for heating the susceptor and increasing its temperature, and a quartz nozzle 30 for introducing into the apparatus a law-material gas for epitaxial growths. The quartz nozzle 30 has the same configuration as the conventional except than it has fourteen nozzle holes. That is, in addition to the conventional twelve nozzle holes 18a, the quartz nozzle 30 has a nozzle hole 30a with the same diameter as that of the nozzle hole 18a, at the same pitch as the nozzle hole 18a, located below the lowermost- end nozzle hole 18a of the direction of 0 deg., and has a nozzle 30a with the same diameter as that of the nozzle 18a, at the same pitch as the nozzle 18a, below the lowermost-end nozzle 18a of the direction of 180 deg.. Each nozzle 30a is located above the susceptor 12, within a range of 10-20 mm.
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