发明名称 |
POSITIVE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive photoresist composition having excellent resolution and edge roughness of line pattern and hardly causing developing defect in the manufacture of a semiconductor device. SOLUTION: The photoresist composition contains a resin (A) which contains a repeating unit having a specific partial structural and a repeating unit expressed by a specific structure and the solubility of which in an alkali developer increases by the action of an acid and a compound (B) generating the acid by active ray or radioactive ray irradiation. |
申请公布号 |
JP2002174903(A) |
申请公布日期 |
2002.06.21 |
申请号 |
JP20000373077 |
申请日期 |
2000.12.07 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
SASAKI TOMOYA;MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIRO |
分类号 |
G03F7/039;C08K5/00;C08K5/42;C08L101/02;G03F7/075;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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