发明名称 POSITIVE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive photoresist composition having excellent resolution and edge roughness of line pattern and hardly causing developing defect in the manufacture of a semiconductor device. SOLUTION: The photoresist composition contains a resin (A) which contains a repeating unit having a specific partial structural and a repeating unit expressed by a specific structure and the solubility of which in an alkali developer increases by the action of an acid and a compound (B) generating the acid by active ray or radioactive ray irradiation.
申请公布号 JP2002174903(A) 申请公布日期 2002.06.21
申请号 JP20000373077 申请日期 2000.12.07
申请人 FUJI PHOTO FILM CO LTD 发明人 SASAKI TOMOYA;MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIRO
分类号 G03F7/039;C08K5/00;C08K5/42;C08L101/02;G03F7/075;H01L21/027 主分类号 G03F7/039
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