| 摘要 |
PURPOSE: A planarization method of semiconductor devices is provided to improve a characteristic and a reliability by incidently etching a polycrystalline silicon layer for having an incident angle in the range of 30-60 degrees. CONSTITUTION: An oxide(130) and a polycrystalline silicon layer(150) are sequentially formed on a semiconductor substrate(110) having a defined lower structure so as to form a charge storing electrode. Then, a photoresist is deposited to selectively etch the polycrystalline silicon layer(150). After incidently etching the polycrystalline silicon layer(150) using the photoresist as a mask, the photoresist is removed. Then, an interlayer dielectric(180) is deposited on the entire surface of the resultant structure. At this time, the interlayer dielectric(180) is slowly formed at the boundary portion of a cell region(B) and a peripheral region(A) due to the incidently formed polycrystalline silicon layer(150).
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