METHOD FOR MANUFACTURING THERMOELECTRIC SEMICONDUCTOR ULTRA-FINE POWDER

摘要

PURPOSE: A fabrication method of ultra-fine powder is provided to prevent a damage by preventing a fusion phenomenon on a wall or a ball and to get an ultra-fine powder having a size according to a crushing time by preventing a recombination between crushed powders. CONSTITUTION: A fabrication method of ultra-fine powder comprises first steps(S10-S16) melting a metal source instead of powder and then, forming a thermoelectric semiconductor intermetallic compound by abruptly cooling the melted metal source, second steps(S18-S22) crushing the thermoelectric semiconductor intermetallic compound into powder-type and then, minutely grinding the crushed powder into ultra-fine powder using a high energy ball mill.