| 摘要 |
Disclosed are a thin-film transistor, a pixel structure, an array substrate, a display device and manufacturing methods for the thin-film transistor and the pixel structure. The thin-film transistor comprises a grid electrode, a source electrode and a drain electrode, wherein a first passivation layer made of an aluminium oxide material is disposed on the source electrode and the drain electrode, and an area of the first passivation layer corresponding to the grid electrode is provided with an active layer formed by an aluminium oxide material through doping ions. The doped ions comprise gallium ions and tin ions, so that the doped aluminium oxide material forms an aluminum gallium tin oxide. Because the first passivation layer serving as an insulating material forms an active layer by ion doping, the manufacturing process of a thin-film transistor is simplified, and an etch stop layer can be omitted, thus simplifying the structure of the thin-film transistor. (FIG. 4) |
