| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent a bridge due to a landing plug by forming a gate line to vertical shape. CONSTITUTION: A polysilicon layer(31) and a metal silicide(32) are sequentially formed on an insulating substrate. A first nitride layer(33) is formed on the metal silicide(32). An oxide pattern(34) is formed by forming an oxide layer on the first nitride layer(33) and selectively patterning the oxide layer. A second nitride spacer(35a) is formed at both sidewalls of the oxide pattern(34). A gate line is formed by sequentially etching the first nitride layer, the metal silicide and the polysilicon layer using the oxide pattern as a mask.
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