| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-accuracy high-frequency capacitor which can be produced at a low cost. SOLUTION: A high-accuracy high-frequency capacitor is equipped with a dielectric layer 104 formed on the front face of a semiconductor board 102, and a first electrode 106 is formed in the dielectric layer 104. The semiconductor board 102 is highly doped, so that it is low in resistivity. A second electrode 108 is formed on the front surface of the semiconductor board 102 and insulated from the first electrode 106. As an example, the second electrode 108 is electrically connected to the rear conductive layer 120 by a via filled with metal. As the other example, a via can be dispensed with, the second electrode is either electrically connected to the board or formed on the dielectric layer, and a pair of capacitors which are continuously connected is formed. |
