| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can realize a small size and thinner package just suitable for the loading of an ultra-fine semiconductor chip by reducing thickness of a supporting substrate. SOLUTION: The supporting substrate 80 is formed by integrating two sheets of conductive foils 82, 83 and a thermosetting resin film 81 disposed between these foils with a thermal pressurizing process, and a conductive material 87 is also provided through the thermosetting resin film 81 in above thermal pressurizing process to form the conductive material 87 for electrically connecting both conductive foils 82, 83 without via-hole. Each electrode is formed with both conductive foils 82, 83 to mount a semiconductor chip 88. In this timing, a resist layer 120 is formed among the connecting electrodes 86, 86a, 86b formed of the conductive foil 83 to prevent vertical sink of the semiconductor chip 88 in the bonding process. Consequently, an extremely thin mounting structure can be realized with a simplified structure and a semiconductor device just suitable for mounting of an ultra-fine semiconductor chip can also be realized. |
