| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to reduce a contact resistance of a lower electrode by reducing interface resistance between an ohmic contact layer and a diffusion barrier layer. CONSTITUTION: An insulating layer(22) having a contact hole is formed on a conductive layer(21). A recessed polysilicon plug(23) is formed in the contact hole. A TiSi2 ohmic contact layer(24) is formed by depositing a Ti on the recessed polysilicon plug(23) and thermal reacting. The non-reacted Ti atoms are removed by cleaning. A TiN diffusion layer(25) is formed by PECVD(Plasma Enhanced CVD) using NH3 gases. Then, a lower electrode(26), a dielectric film(27) and an upper electrode(28) are sequentially formed on the resultant structure.
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