发明名称 METHOD AND SYSTEM FOR SUBSTRATE TREATMENT
摘要 PURPOSE: To reduce influence on rate limiting due to other treatment parts. CONSTITUTION: The system consists of a load/unload part 2 which carries an untreated wafer into each treatment unit and unloads a treated wafer W from each of the treatment units, a sub-arm mechanism which is provided to each treatment unit accessibly, delivers a wafer W between it and the load/unload part 2 and carries a wafer W to each treatment unit one by one and a controller 13, which controls each part to carry out treatment by each treatment unit one by one by applying a maximum duration tn/m per unit, which is obtained by dividing the duration tn of each treatment unit by a number (m) of the treatment units as a single cycle, and sets a prewaiting time by a heat treatment system unit.
申请公布号 KR20020046994(A) 申请公布日期 2002.06.21
申请号 KR20010078792 申请日期 2001.12.13
申请人 TOKYO ELECTRON LIMITED 发明人 MIYATA AKIRA;TATEYAMA MASANORI
分类号 G03F7/30;B65H1/00;H01L21/00;H01L21/02;H01L21/027;H01L21/677;H01L21/68;(IPC1-7):H01L21/02 主分类号 G03F7/30
代理机构 代理人
主权项
地址