发明名称 CMOS ACTIVE PIXEL IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To prevent electrons generated inside a separation area outside a photodetector from moving to the photodetector and to prevent photoelectrons overflowing from one photodetector from moving to the adjacent photodetector as well. SOLUTION: In the array of pixels making up this CMOS active pixel image sensor, at least one pixel is provided with the photodetector 12, a voltage source 21 for supplying a voltage to the photodetector and a scavenging diode 40 adjacent to the photodetector that can be connected to the voltage source. The scavenging diode 40 is arranged between adjacent pixels and prevents the electrons outside the photodetector from moving to the photodetector.
申请公布号 JP2002176163(A) 申请公布日期 2002.06.21
申请号 JP20010270195 申请日期 2001.09.06
申请人 EASTMAN KODAK CO 发明人 GUIDASH ROBERT MICHAEL
分类号 H01L27/146;H04N5/335;(IPC1-7):H01L27/146 主分类号 H01L27/146
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