| 摘要 |
PROBLEM TO BE SOLVED: To form an aggregate of crystal grain in priority orientation, whose grain diameter is small. SOLUTION: A semiconductor thin film is constituted of a plurality of crystal grains, and generation of projection in a boundary part of adjacent crystal grains is restrained by directing laser beam to an amorphous silicon film a plurality of times. Consequently, a polycrystalline silicon thin film element internally containing cluster crystal of an aggregate of at least two or more crystal grains is realized, and high mobility of 200 cm2/Vs or more is realized.
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