| 摘要 |
PURPOSE: A method for fabricating a III-V nitride film and an apparatus for fabricating the same are provided to grow epitaxially a good quality AlxGayInzN (x+y+z=1, x>=0, y>=0, Z>=0) film at a higher film growth rate without the fluctuation in thickness by a MOCVD method. CONSTITUTION: The method for fabricating a III-V nitride film includes preparing a reactor(11) horizontally, setting a substrate(12) onto a susceptor(13) installed in the reactor, heating the substrate to a predetermined temperature, directly cooling at least the portion of the inner wall of the reactor opposite to the substrate, and introducing a III raw material gas and a V raw material gas with a carrier gas onto the substrate, and thus, fabricating a III-V nitride film by a MOCVD method.
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