| 摘要 |
PURPOSE: A method for fabricating a thin film transistor(TFT) of a semiconductor device is provided to improve an electrical characteristic of the TFT, by consecutively and uniformly depositing a gate insulation layer and a polysilicon layer for a channel on the entire surface of a wafer. CONSTITUTION: A gate electrode(22) is formed in a predetermined region on an insulation substrate(21). The gate insulation layer(23) and the polysilicon layer are consecutively formed on the entire surface of the insulation substrate including the gate electrode. The polysilicon layer and the gate insulation layer are selectively removed to expose a predetermined portion of the surface of the gate electrode so that a contact hole is formed. A source/drain region(27) and a channel region are formed in the polysilicon layer, respectively. An insulation layer(28) is formed on the entire surface of the insulation substrate except the lower surface of the contact hole. A high conductive material layer(29) is formed in the contact hole.
|
