| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in the conventional case where pins for probing are stood on base electrodes and emitter electrodes from a surface of a wafer, collector electrodes formed by depositing metal on backs are arranged on a chuck table, electrodes are led out, and measurement is performed by standing a pin on the table in the case where characteristic is checked after a semiconductor element region is formed, but in the case where the wafer is thinned, electrodes cannot be led out from backs when a sheet is stuck for protection. SOLUTION: Electrodes which are composed of aluminum and substituted for collectors and whose diameters are 10-50μm are arranged on a dicing street of a surface of a wafer. Since the electrodes are positioned on the dicing street, they are diced in an assembling process, and influence is not exerted on a yield of the wafer at all. Measurement from a surface of the wafer becomes possible when the wafer is thinned and the sheet for protection is stuck on the back.
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