| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an active region and increasing the breakdown strength of a gate voltage and a semiconductor integrated circuit device capable of reducing a manufacture cost by forming the application circuit of a small occupancy area. SOLUTION: A p base region 2 is formed on the surface layer of an n- semiconductor substrate 1, a p+ well region 3 is formed around the p base region 2 and an n+ cathode region 4 is formed on the surface layer of the p base region 2 and the p+ well region 3. An n buffer region 6 is formed on the surface layer of the n- semiconductor substrate 1 away from the p+ well region 3, a p+ anode region 7 is formed on the surface layer of the n buffer region 6, a field oxidized film 9 is formed on a region held there between the n+ cathode region 4 and the n buffer region 7 and the gate electrode 15 is formed on the field oxidized film 9.
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