| 摘要 |
PROBLEM TO BE SOLVED: To suppress the generation of a bird's beak on a body region on an element isolation oxide film in a semiconductor device. SOLUTION: The method of manufacturing a semiconductor device comprises a process for forming a pad oxide film 13 on a body region 12 on a SOI board, a process for forming a silicon nitride film 14 on the film 13, a process for ion-implanting aluminium(Al) in the film 14, a process for patterning a prescribed region on the film 14 and an aperture region is formed in the films 13 and 14 so that the region 12 is exposed, a process for oxidizing the region 12 exposed from the aperture region to form an element isolation oxide film 17 and a process for removing an oxide layer which is formed on the surface of the film 17.
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