发明名称 LASER ANNEALING CRYSTALLIZATION IN-SITU ANALYZING APPARATUS
摘要 PROBLEM TO BE SOLVED: To enable measuring of an observation image or a Raman spectrum of a film infinitesimal part in-situ in a laser annealing crystallizing step of an amorphous film. SOLUTION: A laser annealing crystallization in-situ analyzing apparatus perforates a hole at an object, applies an excimer laser beam through the hole to the film, simultaneously guides a reflected light or a Raman light to a spectroscope, a detector via the objective, and observes a sample state.
申请公布号 JP2002176009(A) 申请公布日期 2002.06.21
申请号 JP20000376562 申请日期 2000.12.06
申请人 HITACHI LTD 发明人 YAMAGUCHI HIROKATSU;OGATA KIYOSHI;TAMURA TAKUO
分类号 G01N25/04;G01J5/00;G01N21/64;G01N21/65;H01L21/20;H01L21/268;H01L21/66;(IPC1-7):H01L21/268 主分类号 G01N25/04
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