| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for accurately changing the electric characteristics of a semiconductor wafer for manufacturing a hetero structure modulation doped field effect transistor to a value within a desired range while confirming that the sagging of the boundary of an epitaxial layer and the spread of impurities, etc., are not deteriorated by a nondestructive method. SOLUTION: A laminated body composed by laminating a buffer layer 2, a channel layer 3, a barrier layer 4 having an Si delta doped carrier supply layer 5 composed by doping Si in a delta function shape, an etching stopper layer 6, an intermediate layer 7 for contact, a lower contact layer 8 and an upper contact layer 9 on a substrate 1 in the order as an epitaxial film is heat- treated. The change of the electric characteristics of the wafer by the heat treatment is recognized by measuring the photoluminescence of the channel layer 3 or the barrier layer 4.
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