METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A capacitor formation method of semiconductor devices is provided to prevent a damage of a capacitor oxide by etching a barrier nitride using a polysilicon hard mask as a mask. CONSTITUTION: A barrier nitride(3), an etch stopper(4) and a capacitor oxide(5) are sequentially formed on a substrate having a plug(2). A polysilicon hard mask(6) is then formed on the capacitor oxide. An anti-reflective coating(7) is formed on the hard mask(6). After selectively etching the capacitor oxide and the etch stopper, the barrier nitride(3) is etched by using the polysilicon hard mask(6) as a mask. A storage node and a refill oxide are sequentially formed on the resultant structure. After etch-back the refill oxide so as to remain the hard mask having at least the thickness of 500 Å, the storage node and the hard mask are etch-backed. The remaining hard mask(6) is then polished.