发明名称 METHOD FOR PROCESSING SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To reduce a crack failure of a silicon wafer and to improve its yield by providing a polishing technique for flattening an infinitesimal ruggedness existing on a side face of a silicon block or a silicon stack in a short time. SOLUTION: A method for processing the silicon wafer comprises the step of flattening the infinitesimal ruggedness existing on the side face of the silicon block or the silicon stack for manufacturing a silicon wafer.
申请公布号 JP2002176014(A) 申请公布日期 2002.06.21
申请号 JP20010272356 申请日期 2001.09.07
申请人 SHARP CORP 发明人 KAJIMOTO KIMIHIKO;WAKUTA JUNZO
分类号 B24B25/00;B24B37/00;B24B37/04;H01L21/304;H01L31/04 主分类号 B24B25/00
代理机构 代理人
主权项
地址