发明名称 |
METHOD FOR PROCESSING SILICON WAFER |
摘要 |
PROBLEM TO BE SOLVED: To reduce a crack failure of a silicon wafer and to improve its yield by providing a polishing technique for flattening an infinitesimal ruggedness existing on a side face of a silicon block or a silicon stack in a short time. SOLUTION: A method for processing the silicon wafer comprises the step of flattening the infinitesimal ruggedness existing on the side face of the silicon block or the silicon stack for manufacturing a silicon wafer. |
申请公布号 |
JP2002176014(A) |
申请公布日期 |
2002.06.21 |
申请号 |
JP20010272356 |
申请日期 |
2001.09.07 |
申请人 |
SHARP CORP |
发明人 |
KAJIMOTO KIMIHIKO;WAKUTA JUNZO |
分类号 |
B24B25/00;B24B37/00;B24B37/04;H01L21/304;H01L31/04 |
主分类号 |
B24B25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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