| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly sensitive photosensor. SOLUTION: This photosensor is composed of a semiconductor photodetector integrated with a MOS transistor, the photodetector is composed of a P-N junction and electric charges generated by irradiation are stored in the P-N junction. The P-N junction of the photodetector is separated from the well region of the MOS transistor.
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