| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to increase capacitance, by guaranteeing a sufficient margin in forming a negative capacitor and by arbitrarily controlling the size of a capacitor having the same design rule. CONSTITUTION: A nitride layer(22) and an oxide layer are sequentially formed on a semiconductor substrate(21). A hard mask layer is formed on the oxide layer. A photoresist layer is applied on the hard mask layer and is patterned to define a capacitor region. The hard mask layer, the oxide layer and the nitride layer are selectively removed to expose a predetermined portion of the surface of the semiconductor substrate by using the patterned photoresist layer as a mask so that the capacitor region is formed. A spin-on-glass(SOG) layer is formed on the entire surface of the semiconductor substrate including the capacitor region. The SOG layer is wet-etched. The photoresist layer is eliminated. A polysilicon layer is formed on the entire substrate of the silicon substrate including the capacitor region.
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