| 摘要 |
PURPOSE: A method for fabricating a dual damascene of a semiconductor device is provided to uniformly form a metal interconnection and to stabilize an electrical characteristic of the metal interconnection, by precisely controlling the thickness in a portion reserved for the metal interconnection. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(21). A photoresist layer pattern is formed in a predetermined region on the interlayer dielectric. An insulation layer is formed on the entire surface including the photoresist layer pattern by a plasma enhanced chemical vapor deposition(PECVD) method. The photoresist layer pattern is eliminated to form a trench by a lift-off method. The insulation layer and the interlayer dielectric are selectively removed to form a contact hole. The metal interconnection(28) is formed in the contact hole and the trench.
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