| 摘要 |
PURPOSE: A fabrication method of fine patterns is provided to easily form island-shaped fine patterns by using double exposure. CONSTITUTION: A negative photoresist is coated on an etch-object layer. The negative photoresist is firstly exposed to achieve opened regions of island shape by using a mask of horizontal line and space shape. The negative photoresist is secondly exposed by using a mask of vertical line and space shape. Then, the non-exposed negative photoresist is developed, thereby forming island-shaped fine patterns. The island-shaped fine patterns are a storage node adopted for design-rule of 0.13-0.1 micrometers.
|
