| 摘要 |
PROBLEM TO BE SOLVED: To provide a photonic device, and its fabricating method, in which an AlGaInN buffer layer having excellent crystallinity is formed on a sapphire substrate with no crack, and an AlGaInN device multilayer film having excellent crystallinity is formed thereon with no crack. SOLUTION: In the photonic device where an AlGaInN device multilayer film is deposited to satisfy a relation AlxGayInzN (x+y+z=1, x, y, z>=0) on a substrate comprising a sapphire substrate body and an AlGaInN buffer layer formed on the surface thereof, minimum Al composition in the buffer layer is set not lower than the Al composition of the thickest layer in the device multilayer film, and Al composition x of the buffer layer is decreased continuously or stepwise toward the device multilayer film from the opposite side thereof. |
