LONG WAVELENGTH SURFACE EMITTING LASER DEVICE HAVING DIFFUSION AREA ON BOTH END PARTS OF UPPER MIRROR LAYER AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A long wavelength surface emitting laser device having a diffusion area on both end parts of an upper mirror layer and a method for fabricating the same are provided to prevent a loss of absorption of a p type doping layer within a resonator and reduce a scattering loss of a mirror layer and a carrier loss by controlling efficiently current flow. CONSTITUTION: A lower mirror layer(22) is formed on an n type InP semiconductor substrate(21). An active layer(23) is formed on the lower mirror layer(22). The active layer(23) is formed with a quantum well layer and a spatial layer. An electron leakage barrier(24) is formed on the active layer(23). A current induction layer(25) is formed on the electron leakage barrier(24). A current expansion layer(26) is formed on the current induction layer(25). The current expansion layer(26) is formed by a p type semiconductor layer. An upper mirror layer(27) is formed on the current expansion layer(26). A Zn diffusion layer(28) is formed on end parts of the upper mirror layer(27). An insulating layer(29) is used for forming an air layer among the current expansion layer(26), the current induction layer(25), and the current leakage barrier(24). The first metallic line(31) is connected with the upper mirror layer(27). The second metallic line(32) is connected with a back side of the n type InP semiconductor substrate(21).