| 摘要 |
A method for forming a CMOS transistor with self-aligned cladding is provided that comprises forming a disposable gate structure (20) outwardly from a substrate (10) in a gate region (62) where the disposable gate structure (20) comprises a replaceable material (18). The method next provides for forming a source (40) and a drain (42) in the substrate (10) on opposite sides of the gate region (62). The method next provides for cladding the source region (40) and the drain region (42) using a self-aligned process. The method next provides for selectively removing the disposable gate structure (20), and forming a gate structure (70) in the gate region (62) vacated by the disposable gate structure (20). The method next provides for cladding a gate structure (70) using a self-aligned process.
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