| 摘要 |
PURPOSE: A method for fabricating an apparatus for igniting a single crystalline semiconductor bridge is provided to prevent an accident caused by explosion of a detonator, by guaranteeing excellent stability as compared with an igniter using a conventional platinum heat wire. CONSTITUTION: Impurities are directly implanted into a silicon wafer substrate(3) to form a PN junction of a predetermined thickness. Aluminum as an electrode material suitable for an electrode pattern is applied on the PN junction. A photoresist material is applied on a pattern having a type of a last igniting apparatus. The junction is etched in an etch solution through an electrochemical etch process, and the photoresist material is eliminated.
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