Fabrication method for an embedded dynamic random access memory (DRAM)

摘要

The invention describes an embedded dynamic random access memory (DRAM) fabrication method. After several landing pads in the memory cell region of a substrate have been formed, a bit-line contact opening and first contact opening are formed simultaneously. The bit-line contact opening exposes the landing pad and the first contact opening exposes the NMOS of the periphery circuit region. An N-type ion implantation is performed to implant N-type ions into the landing pad the NMOS. After a bit-line contact, a first contact, and a bit-line have been formed, a storage node contact opening and a second contact opening are formed simultaneously. The storage node contact opening exposes another landing pad and the second contact opening exposes a P-type MOS in the periphery circuit region. A P-type ion implantation step is conducted to implant P-type ions into the landing pad and the PMOS exposed by the second contact opening. A storage node contact is formed in the storage node contact opening and a second contact is formed in the second contact opening. A capacitor is formed that is electrically connected to the storage node contact.