发明名称 Chamber pressure state-based control for a reactor
摘要 A process chamber containing a substrate has at least one process gas introduced for reacting with a surface of the substrate to form a layer on the substrate. The gas creates a certain pressure in the chamber. At a certain time, the gas is expelled to end the reaction, and the gas pressure is reduced. The detection of the change in pressure in said chamber automatically controls valves to supply a second gas into the chamber to further react with the surface of the substrate.
申请公布号 US2002076481(A1) 申请公布日期 2002.06.20
申请号 US20010004488 申请日期 2001.10.24
申请人 CHIANG TONY P.;LEESER KARL F.;BROWN JEFFREY A.;BABCOKE JASON E. 发明人 CHIANG TONY P.;LEESER KARL F.;BROWN JEFFREY A.;BABCOKE JASON E.
分类号 C23C16/02;C23C16/08;C23C16/18;C23C16/34;C23C16/40;C23C16/44;C23C16/448;C23C16/455;C23C16/458;C23C16/515;H01J37/32;H01L21/285;H01L21/768;(IPC1-7):C23C16/00 主分类号 C23C16/02
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