发明名称 |
Test wafer and method for investigating electrostatic discharge induced wafer defects |
摘要 |
A test wafer and method for investigating electrostatic discharge induced wafer defects are disclosed. The test wafer includes an electrostatic discharge (ESD) sensitive risk scale geometry, formed thereon. After exposure to a semiconductor manufacturing procedure, the test wafer may be analyzed by using the ESD risk scale geometry to identify and evaluate severity of any ESD effects associated with the semiconductor manufacturing procedure.
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申请公布号 |
US2002076840(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20020071167 |
申请日期 |
2002.02.08 |
申请人 |
DUPONT PHOTOMASKS, INC. A DELAWARE CORPORATION |
发明人 |
ENGLISCH ANDREAS |
分类号 |
G03F7/20;G03F1/00;G03F1/14;H01L21/027;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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