摘要 |
A semiconductor device includes a silicon substrate and a compound semiconductor layer formed on a main plane of the silicon substrate. The compound semiconductor layer is represented by the general formula of InxGayAlzN (where x+y+z=1, 0<=x<=1, 0>=y>=1, 0<=z<=1). The silicon substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the silicon substrate, or a plane inclined in a range within 3 degrees in an arbitrary direction from the inclined plane. The compound semiconductor layer is formed on the slope. The semiconductor device includes compound semiconductor layers represented by AlxGayInzN (where x+y+z=1, 0<=x<=1, 0<=y<=1, 0<=z<=1) on a silicon substrate. The silicon substrate has a main plane constituted by a plane in a range of ±5 degrees in an arbitrary direction from a (112) plane. The compound semiconductor layers are formed on the main plane.
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