ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD

摘要

An atomic layer deposition apparatus that uniformly controls film thickness throughout an entire area of a substrate includes: a film formation container in which the substrate is disposed inside, the film formation container provided with a plurality of exhaust ports for discharging an internal gas, the plurality of exhaust ports arranged at intervals and arranged parallel to a surface of the substrate on which the thin film is formed; a source gas supply unit that supplies a source gas of the thin film into the film formation container; a reactive gas supply unit that supplies, into the film formation container, a reactive gas for forming the thin film in reaction with a component of the source gas adsorbed to the substrate; exhaust valves connected to the exhaust ports; and a control unit that controls the plurality of exhaust valves to control an exhaust volume from each of the exhaust ports.

主权项

1. An atomic layer deposition apparatus that forms a thin film on a substrate, the atomic layer deposition apparatus comprising:
a film formation container in which the substrate is disposed inside, the film formation container provided with a plurality of exhaust ports for discharging an internal gas, the plurality of exhaust ports arranged at intervals and arranged parallel to a surface of the substrate on which the thin film is formed; a source gas supply unit that supplies a source gas of the thin film into the film formation container; a reactive gas supply unit that supplies, into the film formation container, a reactive gas for forming the thin film in reaction with a component of the source gas adsorbed to the substrate; exhaust valves connected to the exhaust ports; and a control unit that controls the plurality of exhaust valves to control an exhaust volume from each of the exhaust ports.