| 发明名称 |
THIN FILM FORMATION METHOD, THIN FILM, AND GLASS PLATE HAVING THIN FILM ATTACHED THERETO |
| 摘要 |
The present invention relates to a method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, in which a raw material gas contains titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)). |
| 申请公布号 |
US2016258055(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201615157936 |
申请日期 |
2016.05.18 |
| 申请人 |
Asahi Glass Company, Limited |
发明人 |
IWAOKA Hiroaki;SEKI Atsushi;CHONAN Kousuke;USUI Reo;SUZUKI Toshio;ABE Tomomi |
| 分类号 |
C23C16/40;C09D1/00;C03C17/34 |
主分类号 |
C23C16/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a TiO2 thin film on a substrate by using an atmospheric pressure CVD method, wherein
a raw material gas comprises titanium tetraisopropoxide (TTIP) and a chloride of a metal M vaporizable in a temperature range of 100 to 400° C. and the amount of the chloride of the metal M is from 0.01 to 0.18 as a concentration ratio to the titanium tetraisopropoxide (TTIP) (chloride of metal M (mol %)/TTIP (mol %)). |
| 地址 |
Chiyoda-ku JP |
