发明名称 |
Combined gate cap or digit line and spacer deposition using HDP |
摘要 |
A method for fabricating gate electrodes and gate interconnects with a protective silicon oxide or silicon nitride cap and spacer formed by high density plasma chemical vapor deposition (HDPCVD). Silicon oxide or silicon nitride is deposited in a reaction zone of a HDPCVD reactor while providing two or more selected substrate bias powers, source powers and/or selected gas mixtures to tailor the shape and thickness of the film for desired applications. In one embodiment, a low bias power of below 500 Watts is provided in a first stage HDPCVD and the bias power is then increased to between 500 and 3000 Watts for a second stage to produce a protective film having thin sidewall spacers for enhanced semiconductor device density and a relatively thick cap.
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申请公布号 |
US2002076947(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010989036 |
申请日期 |
2001.11.21 |
申请人 |
LI WEIMIN;SHARAN SUJIT;SANDHU GURTEJ |
发明人 |
LI WEIMIN;SHARAN SUJIT;SANDHU GURTEJ |
分类号 |
C23C16/34;C23C16/40;H01L21/316;H01L21/318;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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