发明名称 |
Energy robust field effect transistor |
摘要 |
A field effect transistor (30) has an array of transistors (31) made up of bonding pads (45-47) and sub-arrays of transistors (41-43). The bonding pads (45-47) are distributed between the sub-arrays of transistors (41-43) to reduce the maximum temperature that any portion of the FET (30) is exposed to while the FET (30) is in a conducting state. A similar effect can be appreciated by adjusting the threshold voltage or pinch-off resistance of the transistors in a portion (101) of an array of transistors (95) or by providing transistors with a higher thermal breakdown in the center of the field effect transistor (30).
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申请公布号 |
US2002074574(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010002705 |
申请日期 |
2001.10.31 |
申请人 |
CHUNG YOUNG SIR;BAIRD ROBERT W. |
发明人 |
CHUNG YOUNG SIR;BAIRD ROBERT W. |
分类号 |
H01L27/02;(IPC1-7):H01L31/119;H01L31/113;H01L31/062;H01L29/76 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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