Method for fabricating integrated circuit arrangements, and associated circuit arrangements, in particular tunnel contact elements

摘要

The invention relates, inter alia, to a method in which an electrically nonconductive mask layer (16) is applied to an electrically conductive contact layer which is supported by a substrate layer (12). A free space is made in the mask layer (16). Then, a plurality of layers (52 to 60) are electrochemically deposited in the free space. Then, layers (72 and 76) are applied above the layer (60) which was deposited last. Then, in a removal process, the mask layer (16) is removed down to the height of the top layer (76).