| 摘要 |
<p>An edge emitting LED comprises a semiconductor substrate (11) having a main surface and an active layer (14) formed over the main surface. The active layer has a light emitting region (A), an optical absorption region (B) with a bandgap energy smaller than that of the light emitting region, and a composition change region formed between the light emitting region and the optical absorption region, the composition change region. The badgap energy of the composition change region changes continuously. Accordingly, the edge emitting LED is able to produce a stable, spontaneous emission of a light under a wide range of operating conditions. Furthermore, a method of forming an edge emitting LED, comprising the steps of: providing a semiconductor substrate having a previous formation region of an active layer having a light emitting region and an optical absorption region continued with the light emitting region; forming a mask pattern over the substrate located on both sides of the optical absorption region; and forming the active layer over the formed structure. Accordingly, a method of forming a edge emitting LED is able to form a light emitting region and an optical absorption region, with one-step growth. <IMAGE></p> |
