| 摘要 |
PURPOSE: An etch method using fluoride-ether based etch gas is provided to remarkably reduce the quantity of exhausted contaminant, by preventing a microloading effect, residue, particles and an etch stop phenomenon. CONSTITUTION: A layer on a semiconductor substrate is etched by using fluoride-ether so that a global warming phenomenon is minimized. The etch process is performed by adding Ar, N2, O2 or CO to the fluoride-ether gas. A silicon oxide layer, a silicon oxynitride layer, a silicon nitride layer or a low-k layer is used in a contact etch process, an insulation layer trench etch process, a spacer etch process, a hard mask etch process and a planarization-etch process.
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