| 摘要 |
The invention is related to a Hall effect element comprising:
a layer of graphene deposited on a layer of silicon carbide; wherein said layer of graphene having a pattern of terraces and step edges arranged in parallel to one another on the surface of said layer of graphene;
at least four metallic elements situated on said layer of graphene and forming ohmic contact with said layer of graphene, wherein
two of said metallic elements placed at a certain distance opposite to each other are inputs (IN1, IN2) suitable for feeding the Hall effect element with direct current
two other of said metallic elements placed at a certain distance opposite to each other are outputs (OUT1, OUT2)
characterised in that a straight line connecting said inputs (IN1, IN2) forms an angle ± equal to 0° or 90° with said terraces and step edges. |
