发明名称 |
High density plasma chemical vapor deposition (HDP-CVD) processing of gallium arsenide wafers |
摘要 |
Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.
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申请公布号 |
US2002076939(A1) |
申请公布日期 |
2002.06.20 |
申请号 |
US20010968342 |
申请日期 |
2001.09.28 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
LI ZHUANG;YIIN TZUYUAN;HAN LUNG-TIEN;ROSSMAN KENT |
分类号 |
C23C16/507;C23C16/52;C30B25/10;(IPC1-7):H01L21/20;H01L21/36;C23C16/00 |
主分类号 |
C23C16/507 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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